3SK222-VBB-A datasheet

Маркировка

3SK222-VBB-A
Производитель

Renesas Electronics
Описание

Renesas Electronics 3SK222-VBB-A Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: TIN BISMUTH Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.2000 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: DUAL GATE, DEPLETION Transistor Type: RF SMALL SIGNAL Power Gain-Min (Gp): 21 dB Drain Current-Max (ID): 0.0250 A Highest Frequency Band: VERY HIGH FREQUENCY BAND Feedback Cap-Max (Crss): 0.0300 pF
Количество страниц

6 шт.
Формат

PDF
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Размер файла

38,27 KB